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mrf6vp11khr6 1 rf device data freescale semiconductor rf power field effect transistor n--channel enhancement--mode lateral mosfet designed primarily for pulsed wideband applications with frequencies up to 150 mhz. device is unmatched and is suitable for use in industrial, medical and scientific applications. ? typical pulsed performance at 130 mhz: v dd =50volts,i dq = 150 ma, p out = 1000 watts peak (200 w avg.), pulse width = 100 sec, duty cycle = 20% power gain ? 26 db drain efficiency ? 71% ? capable of handling 10:1 vswr, @ 50 vdc, 130 mhz, 1000 watts peak power features ? characterized with series equival ent large--signal impedance parameters ? cw operation capabilit y with adequate cooling ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? designed for push--pull operation ? greater negative gate--source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +110 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 1000 w pulsed, 100 sec pulse width, 20% duty cycle case temperature 67 c, 1000 w cw, 100 mhz z jc r jc 0.03 0.13 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf6vp11kh rev. 7, 4/2010 freescale semiconductor technical data mrf6vp11khr6 case 375d--05, style 1 ni--1230 1.8--150 mhz, 1000 w, 50 v lateral n--channel broadband rf power mosfet part is push--pull (top view) rf outa /v dsa 31 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb figure 1. pin connections ? freescale semiconductor, inc., 2008--2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf6vp11khr6 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 10 adc drain--source breakdown voltage (i d = 300 ma, v gs =0vdc) v (br)dss 110 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 100 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 5 ma on characteristics gate threshold voltage (1) (v ds =10vdc,i d = 1600 adc) v gs(th) 1 1.63 3 vdc gate quiescent voltage (2) (v dd =50vdc,i d = 150 madc, measured in functional test) v gs(q) 1.5 2.2 3.5 vdc drain--source on--voltage (1) (v gs =10vdc,i d =4adc) v ds(on) ? 0.28 ? vdc dynamic characteristics (1) reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 3.3 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 147 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 506 ? pf functional tests (2) (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq = 150 ma, p out = 1000 w peak (200 w avg.), f = 130 mhz, 100 sec pulse width, 20% duty cycle power gain g ps 24 26 28 db drain efficiency d 69 71 ? % input return loss irl ? -- 1 6 -- 9 db 1. each side of device measured separately. 2. measurement made with device i n push--pull configuration.
mrf6vp11khr6 3 rf device data freescale semiconductor figure 2. mrf6vp11khr6 test circuit schematic z14, z15 0.116 x 0.253 microstrip z16*, z17* 0.035 x 0.253 microstrip z18 0.275 x 0.082 microstrip z19 0.845 x 0.082 microstrip pcb arlon cuclad 250gx--0300--55--22, 0.030 , r =2.55 *line length includes microstrip bends. z1 0.175 x 0.082 microstrip z2* 1.461 x 0.082 microstrip z3* 0.080 x 0.082 microstrip z4, z5 0.133 x 0.193 microstrip z6, z7, z8, z9 0.500 x 0.518 microstrip z10, z11 0.102 x 0.253 microstrip z12, z13 0.206 x 0.253 microstrip v bias c2 + v supply + c1 c3 + b1 r1 c4 c5 c6 c7 c8 c9 c10 l1 c11 z1 rf input l2 z2 c12 z3 z4 z6 z5 z7 z8 c21 z10 z9 c22 z11 c23 z12 z13 c24 z14 z15 c25 z16 z17 rf output z19 c26 z18 + c20 + c19 + c18 c15 c16 c17 c13 c14 l3 r2 t1 t2 dut j1 j2 table 5. mrf6vp11khr6 test circuit component designations and values part description part number manufacturer b1 95 ? , 100 mhz long ferrite bead 2743021447 fair--rite c1 47 f, 50 v electrolytic capacitor 476kxm050m illinois cap c2 22 f, 35 v tantalum capacitor t491x226k035at kemet c3 10 f, 35 v tantalum capacitor t491d106k035at kemet c4, c9, c17 10k pf chip capacitors atc200b103kt50xt atc c5, c16 20k pf chip capacitors atc200b203kt50xt atc c6, c15 0.1 f, 50 v chip capacitors cdr33bx104akys kemet c7 2.2 f, 50 v chip capacitor c1825c225j5rac kemet c8 0.22 f, 100 v chip capacitor c1825c223k1gac kemet c10, c11, c13, c14 1000 pf chip capacitors atc100b102jt50xt atc c12 18 pf chip capacitor atc100b180jt500xt atc c18, c19, c20 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp c21, c22 47 pf chip capacitors atc100b470jt500xt atc c23 75 pf chip capacitor atc100b750jt500xt atc c24, c25 100 pf chip capacitors atc100b101jt500xt atc c26 33 pf chip capacitor ATC100B330JT500XT atc j1, j2 jumpers from pcb to t1 and t2 copper foil l1 82 nh inductor 1812sms--82njlc coilcraft l2 47 nh inductor 1812sms--47njlc coilcraft l3* 10 turn, #18 awg inductor, hand wound copper wire r1 1k ? , 1/4 w carbon leaded resistor mccfr0w4j0102a50 multicomp r2 20 ? , 3 w chip resistor cpf320r000fke14 vishay t1 balun tui--9 comm concepts t2 balun tuo--4 comm concepts *l3 is wrapped around r2.
4 rf device data freescale semiconductor mrf6vp11khr6 figure 3. mrf6vp11khr6 test circuit component layout mrf6vp11kh cut out area rev. 3 c1 b1 c4 c5 c6 l1 c2 c3 c7 c8 c9 c11 r1 t1 c10 l2 c12 c22 c23 c21 c26 c25 c24 c13 c14 c15 c16 c17 c18 c19 c20 t2 l3, r2* * l3 is wrapped around r2. j1 j2
mrf6vp11khr6 5 rf device data freescale semiconductor typical characteristics 50 1 1000 020 10 v ds , drain--source voltage (volts) figure 4. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 100 10 40 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc 1 100 1 t c =25 c 10 10 v ds , drain--source voltage (volts) figure 5. dc safe operating area i d , drain current (amps) 100 t j = 200 c t j = 175 c t j = 150 c 27 10 10 80 100 25 23 21 70 60 50 40 30 p out , output power (watts) pulsed figure 6. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) d 24 22 20 1000 2000 g ps 20 56 65 30 63 62 61 p in , input power (dbm) pulsed figure 7. pulsed output power versus input power 64 60 39 59 26 58 57 31 32 33 34 35 36 37 38 p out , output power (dbm) p3db = 61.23 dbm (1327.39 w) actual ideal p1db = 60.57 dbm (1140.24 w) 16 32 10 28 24 p out , output power (watts) pulsed figure 8. pulsed power gain versus output power g ps , power gain (db) 100 20 i dq = 6000 ma 1000 2000 3600 ma 1500 ma 150 ma 375 ma 750 ma figure 9. pulsed power gain versus output power p out , output power (watts) pulsed g ps , power gain (db) v dd =30v 12 28 0 16 24 35 v 20 45 v 200 400 600 800 1000 1200 1400 1600 50 v 40 v v dd =50vdc,i dq = 150 ma, f = 130 mhz pulse width = 100 sec, duty cycle = 20% v dd =50vdc,i dq = 150 ma, f = 130 mhz pulse width = 100 sec, duty cycle = 20% v dd = 50 vdc, f = 130 mhz pulse width = 100 sec, duty cycle = 20% i dq = 150 ma, f = 130 mhz pulse width = 100 sec duty cycle = 20% note: each side of device measured separately. note: each side of device measured separately.
6 rf device data freescale semiconductor mrf6vp11khr6 typical characteristics 45 45 65 20 25 _ c t c =--30 _ c 85 _ c 35 25 55 50 p in , input power (dbm) pulsed figure 10. pulsed output power versus input power p out , output power (dbm) 30 40 60 27 10 10 80 100 25 23 21 70 60 50 40 30 p out , output power (watts) pulsed figure 11. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d , drain efficiency (%) d 24 22 20 1000 2000 25 _ c t c =--30 _ c 85 _ c 20 26 g ps v dd =50vdc i dq = 150 ma f = 130 mhz pulse width = 100 sec duty cycle = 20% v dd =50vdc i dq = 150 ma f = 130 mhz pulse width = 100 sec duty cycle = 20% 0.2 110 rectangular pulse width (s) figure 12. maximum transient thermal impedance z jc , thermal impedance ( c/w) 0.00001 d=0.7 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.0001 0.001 0.01 0.1 d=0.5 d=0.1 d=dutyfactor=t 1 /t 2 t 1 = pulse width t 2 =pulseperiod t j =p d *z jc +t c t 2 t 1 p d 250 10 8 90 t j , junction temperature ( c) figure 13. mttf versus junction temperature -- cw this above graph displays calculated mttf in hours when the device is operated at v dd =50vdc,p out = 1000 w cw, and d = 72%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 250 10 9 90 t j , junction temperature ( c) figure 14. mttf versus junction temperature -- pulsed this above graph displays calculated mttf in hours when the device is operated at v dd =50vdc,p out = 1000 w peak, pulse width = 100 sec, duty cycle = 20%, and d = 71%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 8 10 7 10 6 110 130 150 170 190 mttf (hours) 210 230
mrf6vp11khr6 7 rf device data freescale semiconductor z o =10 ? z load f = 130 mhz z source f = 130 mhz v dd =50vdc,i dq = 150 ma, p out = 1000 w peak f mhz z source ? z load ? 130 1.58 + j6.47 4.6 + j1.85 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network -- -- + +
8 rf device data freescale semiconductor mrf6vp11khr6 package dimensions
mrf6vp11khr6 9 rf device data freescale semiconductor
10 rf device data freescale semiconductor mrf6vp11khr6 product documentation and software refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 jan. 2008 ? initial release of data sheet 1 apr. 2008 ? corrected description and part number for the r1 resistor and updated r2 resistor to latest rohs compliant part number in table 5, test circu it component designations and values, p. 3. ? added fig. 12, maximum transient thermal impedance, p. 6 2 july 2008 ? added mttf cw graph, fig. 13, mttf versus junction temperature, p. 6 3 sept. 2008 ? added note to fig. 4, capacitance versus drain-- source voltage, to denote that each side of device is measured separately, p. 5 ? updated fig. 5, dc safe operating area, to clar ify that measurement is on a per--side basis, p. 5 ? corrected fig. 13, mttf versus junction temperatur e ? cw, to reflect the correct die size and increased the mttf factor accordingly, p. 6 ? corrected fig. 14, mttf versus junction temperat ure ? pulsed, to reflect the correct die size and increased the mttf factor accordingly, p. 6 4 dec. 2008 ? fig. 15, series equivalent source and load impedance, corrected z source copy to read ?test circuit impedance as measured from gate to gate, balanced configuration? and z load copy to read ?test circuit impedance as measured from drain to dra in, balanced configuration?, p. 7 5 july 2009 ? added 1000 w cw thermal data at 100 mhz to thermal characteristics table, p. 1 ? changed ?ekme630ell471mk25s? part number to ?mcgpr63v477m13x26--rh?, changed r1 description from ?1 k ? , 1/4 w axial leaded resistor? to ?1 k ? , 1/4 w carbon leaded resistor? and ?cmf601000r0fkek? part number to ?mccfr0w4j0102a50?, table 5, test circuit component designations and values, p. 3 ? corrected fig. 13, mttf versus junction temperat ure ? cw, to reflect change in drain efficiency from 70% to 72%, p. 6 ? added electromigration mttf calculator and rf high power model availability to product documentation, tools and software, p. 20 6 dec. 2009 ? device frequency range improved from 10--150 mhz to 1.8--150 mhz, p. 1 ? reporting of pulsed thermal data now shown using the z jc symbol, table 2. thermal c haracteristics, p. 1 7 apr. 2010 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1
mrf6vp11khr6 11 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008--2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6vp11kh rev. 7, 4/2010

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